ELECTRICAL AND OPTICAL-PROPERTIES OF SI DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (311) SUBSTRATES

被引：31

作者：

TAKAMORI, T ^{[1
]}

FUKUNAGA, T ^{[1
]}

KOBAYASHI, J ^{[1
]}

ISHIDA, K ^{[1
]}

NAKASHIMA, H ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 07期

关键词：

D O I：

10.1143/JJAP.26.1097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1097 / 1101

页数：5

共 15 条

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