THERMAL-STABILITY OF A SHORT-PERIOD ALAS/N-GAAS SUPERLATTICE

[1] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629

[2] TRANSIENT CAPACITANCE MEASUREMENTS ON RESISTIVE SAMPLES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 2907 - 2910

[3] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[4] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L623 - L624

[5] INFLUENCE OF ALLOY COMPOSITION, SUBSTRATE-TEMPERATURE, AND DOPING CONCENTRATION ON ELECTRICAL-PROPERTIES OF SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) : 281 - 308

[6] INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (02): : 69 - 78

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[8] MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[9] TRANSMISSION ELECTRON-MICROSCOPY OF INTERFACES IN 3-5 COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 973 - 978

[10] SHARMA BL, 1970, DIFFUSION SEMICONDUC, P8

[1] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629

[2] TRANSIENT CAPACITANCE MEASUREMENTS ON RESISTIVE SAMPLES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 2907 - 2910

[3] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[4] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L623 - L624

[5] INFLUENCE OF ALLOY COMPOSITION, SUBSTRATE-TEMPERATURE, AND DOPING CONCENTRATION ON ELECTRICAL-PROPERTIES OF SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) : 281 - 308

[6] INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (02): : 69 - 78

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[8] MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[9] TRANSMISSION ELECTRON-MICROSCOPY OF INTERFACES IN 3-5 COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 973 - 978

[10] SHARMA BL, 1970, DIFFUSION SEMICONDUC, P8