ANALYSIS OF ELECTRICAL, THRESHOLD, AND TEMPERATURE CHARACTERISTICS OF INGAASP-INP DOUBLE-HETEROJUNCTION LASERS

被引：33

作者：

YANO, M

IMAI, H

TAKUSAGAWA, M

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 09期

关键词：

D O I：

10.1109/JQE.1981.1071310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1954 / 1963

页数：10

共 46 条

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[15] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

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[20] DEFECT-ASSISTED AND PHONON-ASSISTED TUNNELING IN LPE IN1-XGAXP1-ZASZ DH LASER-DIODES (LAMBDA APPROXIMATELY 1 MUM) [J].

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