OPTICAL AND ELECTRONIC-PROPERTIES OF VANADIUM IN GALLIUM-ARSENIDE

[1] GROWTH OF VANADIUM-DOPED SEMI-INSULATING GAAS BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 39 - 43

[2] Brandt C.H., UNPUB

[3] NEW SEMIINSULATING INP - TITANIUM MIDGAP DONORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (17) : 1162 - 1164

[4] IDENTIFICATION OF A VANADIUM-RELATED LEVEL IN LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 607 - 609

[5] BREMOND G, 1985, MATERIALS RES SOC S, V46, P359

[6] BRYSKIEWICZ T, 1980, IN PRESS PROGR CRYST, P187

[7] BRYSKIEWICZ T, IN PRESS J CRYST GRO

[8] THEORETICAL INVESTIGATION OF THE ELECTRICAL AND OPTICAL-ACTIVITY OF VANADIUM IN GAAS [J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7102 - 7109

[9] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 671 - 673

[10] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19): : 3615 - 3661

[1] GROWTH OF VANADIUM-DOPED SEMI-INSULATING GAAS BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 39 - 43

[2] Brandt C.H., UNPUB

[3] NEW SEMIINSULATING INP - TITANIUM MIDGAP DONORS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (17) : 1162 - 1164

[4] IDENTIFICATION OF A VANADIUM-RELATED LEVEL IN LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 607 - 609

[5] BREMOND G, 1985, MATERIALS RES SOC S, V46, P359

[6] BRYSKIEWICZ T, 1980, IN PRESS PROGR CRYST, P187

[7] BRYSKIEWICZ T, IN PRESS J CRYST GRO

[8] THEORETICAL INVESTIGATION OF THE ELECTRICAL AND OPTICAL-ACTIVITY OF VANADIUM IN GAAS [J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7102 - 7109

[9] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 671 - 673

[10] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19): : 3615 - 3661