INTERFACE STATE BEHAVIOR OF PLASMA GROWN OXIDES FOLLOWING LOW-TEMPERATURE ANNEALING

被引：15

作者：

ZHANG, JF

WATKINSON, P

TAYLOR, S

ECCLESTON, W

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90453-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：374 / 380

页数：7

共 9 条

[1]

BALK P, 1965, FAL P EL SOC M BUFF, P29

[2]

JOHNSON NM, 1981, J VAC SCI TECHNOL, V19, P390, DOI 10.1116/1.571070

[3]

KOOI E, 1965, PHILIPS RES REP, V20, P528

[4]

MA TP, 1978, IEEE J SOLID-ST CIRC, V13, P445

[5] THIN SILICON-OXIDES GROWN BY LOW-TEMPERATURE RF PLASMA ANODIZATION AND DEPOSITION [J].

NELSON, SA ;

BUHRMAN, RA .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1095-1097

[6] ADVANCES IN ELECTRICAL-PROPERTIES OF PLASMA-GROWN OXIDES OF SILICON [J].

TAYLOR, S ;

ECCLESTON, W ;

WATKINSON, P .

ELECTRONICS LETTERS, 1987, 23 (14) :732-733

[7] ELIMINATION AND GENERATION OF SI-SIO2 INTERFACE TRAPS BY LOW-TEMPERATURE HYDROGEN ANNEALING [J].

THANH, LD ;

BALK, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (07) :1797-1801

[8] INVESTIGATION OF INFLUENCE OF LOW-TEMPERATURE ANNEALING TREATMENTS ON INTERFACE STATE DENSITY AT SI-SIO2 INTERFACE [J].

YEOW, YT ;

LAMB, DR ;

BROTHERTON, SD .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (13) :1495-&

[9]

ZHANG JF, UNPUB J ELECTROCHEM

← 1 →