ADVANCES IN ELECTRICAL-PROPERTIES OF PLASMA-GROWN OXIDES OF SILICON

被引：10

作者：

TAYLOR, S

ECCLESTON, W

WATKINSON, P

机构：

[1] Univ of Liverpool, Liverpool, Engl, Univ of Liverpool, Liverpool, Engl

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 14期

关键词：

BULK OXIDE - LOW-TEMPERATURE ANNEALING - OXYGEN/CHLORINE PLASMA - PLASMA-GROWN OXIDES;

D O I：

10.1049/el:19870519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：732 / 733

页数：2

共 7 条

[1] AN IMPROVED THEORY FOR THE PLASMA ANODIZATION OF SILICON [J].

BARLOW, K ;

KIERMASZ, A ;

ECCLESTON, W .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (04) :181-183

[2]

HO VQ, 1981, IEEE T ELECTRON DEV, V28, P1060, DOI 10.1109/T-ED.1981.20485

[3] THEORY OF THE GROWTH OF SIO2 IN AN OXYGEN PLASMA [J].

KIERMASZ, A ;

ECCLESTON, W ;

MORUZZI, JL .

SOLID-STATE ELECTRONICS, 1983, 26 (12) :1167-1172

[4] PLASMA OXIDATION OF SILICON [J].

MORUZZI, JL ;

KIERMASZ, A ;

ECCLESTON, W .

PLASMA PHYSICS AND CONTROLLED FUSION, 1982, 24 (06) :605-614

[5]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, P767

[6]

RAY AK, 1980, THIN SOLID FILMS, V84, P389

[7] COMPARISON OF RF AND MICROWAVE OXIDATION SYSTEMS FOR THE GROWTH OF THIN OXIDES AT LOW-TEMPERATURES [J].

TAYLOR, S ;

BARLOW, KJ ;

ECCLESTON, W ;

KIERMASZ, A .

ELECTRONICS LETTERS, 1987, 23 (07) :309-310

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