AN IMPROVED THEORY FOR THE PLASMA ANODIZATION OF SILICON

被引：11

作者：

BARLOW, K

KIERMASZ, A

ECCLESTON, W

机构：

[1] Univ of Liverpool, Dep of Electrical, Engineering & Electronics,, Liverpool, Engl, Univ of Liverpool, Dep of Electrical Engineering & Electronics, Liverpool, Engl

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1985年 / 132卷 / 04期

关键词：

OXYGEN PLASMAS - PLASMA ANODIZATION;

D O I：

10.1049/ip-i-1.1985.0039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：181 / 183

页数：3

共 7 条

[1]

HO VQ, 1980, IEEE T ELECTRON DEV, V27, P1436, DOI 10.1109/T-ED.1980.20053

[2] THEORY OF THE GROWTH OF SIO2 IN AN OXYGEN PLASMA [J].

KIERMASZ, A ;

ECCLESTON, W ;

MORUZZI, JL .

SOLID-STATE ELECTRONICS, 1983, 26 (12) :1167-1172

[3]

KIERMASZ A, 1983, THESIS U LIVERPOOL

[4] SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE [J].

KRAITCHMAN, J .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4323-+

[5] PLASMA OXIDATION OF SILICON [J].

MORUZZI, JL ;

KIERMASZ, A ;

ECCLESTON, W .

PLASMA PHYSICS AND CONTROLLED FUSION, 1982, 24 (06) :605-614

[6] THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .2. THE PRESSURE RANGE ABOVE 10 MTORR [J].

RAY, AK ;

REISMAN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) :2466-2472

[7] THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .1. THE PRESSURE RANGE BELOW 10 MTORR [J].

RAY, AK ;

REISMAN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) :2460-2465

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