THEORY OF THE GROWTH OF SIO2 IN AN OXYGEN PLASMA

被引：22

作者：

KIERMASZ, A

ECCLESTON, W

MORUZZI, JL

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 12期

关键词：

D O I：

10.1016/0038-1101(83)90144-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1167 / 1172

页数：6

共 11 条

[1]

Cabrera N., 1949, REP PROG PHYS, V12, P308

[2] OXIDE-GROWTH IN AN RF PLASMA [J].

FROMHOLD, AT ;

BAKER, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6377-6392

[3]

HO VQ, 1979, JPN J APPL PHYS, V19, P103

[4]

JORGENSEN PJ, 1962, J CHEM PHYS, V37, P4

[5] SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE [J].

KRAITCHMAN, J .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4323-+

[6]

Lampert M A, CURRENT INJECTION SO

[7] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J].

LIGENZA, JR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2703-+

[8] PLASMA OXIDATION OF SILICON [J].

MORUZZI, JL ;

KIERMASZ, A ;

ECCLESTON, W .

PLASMA PHYSICS AND CONTROLLED FUSION, 1982, 24 (06) :605-614

[9] ANODIZATION OF SI IN AN RF PLASMA [J].

PULFREY, DL ;

HATHORN, FGM ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1529-1535

[10] PREPARATION AND PROPERTIES OF PLASMA-ANODIZED SILICON DIOXIDE FILMS [J].

PULFREY, DL ;

RECHE, JJH .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :627-+

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