PREPARATION AND PROPERTIES OF PLASMA-ANODIZED SILICON DIOXIDE FILMS

被引：36

作者：

PULFREY, DL ^{[1
]}

RECHE, JJH ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA, DEPT ELECT ENGN, VANCOUVER 8, BRITISH COLUMBI, CANADA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 06期

关键词：

D O I：

10.1016/0038-1101(74)90184-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：627 / +

页数：1

相关论文

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[9] NONEQUILIBRIUM EFFECTS IN QUASI-STATIC MOS MEASUREMENTS
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