THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .2. THE PRESSURE RANGE ABOVE 10 MTORR

[1] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1729 - 1737

[2] SMALL AREA DEPOSITION OF GE ON GE OR GAAS SUBSTRATES VIA DISPROPORTIONATION OF GEI2 [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 803 - +

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] EVANS UR, 1960, CORROSION OXIDATION, P823

[5] SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1380 - 1384

[6] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1146 - 1151

[7] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2703 - +

[8] THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .1. THE PRESSURE RANGE BELOW 10 MTORR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2460 - 2465

[9] Reisman A., 1973, Journal of Electronic Materials, V2, P177, DOI 10.1007/BF02666151

[10] AUTOMATIC X-RAY-DIFFRACTION MEASUREMENT OF THE LATTICE CURVATURE OF SUBSTRATE WAFERS FOR THE DETERMINATION OF LINEAR STRAIN PATTERNS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6224 - 6230

[1] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1729 - 1737

[2] SMALL AREA DEPOSITION OF GE ON GE OR GAAS SUBSTRATES VIA DISPROPORTIONATION OF GEI2 [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 803 - +

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] EVANS UR, 1960, CORROSION OXIDATION, P823

[5] SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1380 - 1384

[6] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1146 - 1151

[7] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2703 - +

[8] THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .1. THE PRESSURE RANGE BELOW 10 MTORR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2460 - 2465

[9] Reisman A., 1973, Journal of Electronic Materials, V2, P177, DOI 10.1007/BF02666151

[10] AUTOMATIC X-RAY-DIFFRACTION MEASUREMENT OF THE LATTICE CURVATURE OF SUBSTRATE WAFERS FOR THE DETERMINATION OF LINEAR STRAIN PATTERNS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6224 - 6230