CHARACTERIZATION OF TISI2 OHMIC AND SCHOTTKY CONTACTS FORMED BY RAPID THERMAL ANNEALING TECHNOLOGY

被引：6

作者：

MALLARDEAU, C

MORAND, Y

ABONNEAU, E

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 01期

关键词：

D O I：

10.1149/1.2096592

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：238 / 241

页数：4

共 15 条

[1]

AMANO J, 1986, J APPL PHYS, P59

[2] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[3]

ESTREICH DB, 1983, IEEE T COMPUT AID D, V2, P2

[4] LATERAL CURRENT CROWDING EFFECTS ON CONTACT RESISTANCE MEASUREMENTS IN 4 TERMINAL RESISTOR TEST PATTERNS [J].

FINETTI, M ;

SCORZONI, A ;

SONCINI, G .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :524-526

[5]

HUI J, 1985, IEEE ELECTRON DEV LE, V6

[6]

LEW PW, 1984, J APPL PHYS, V56

[7]

LOH WM, 1985, IEEE ELECTR DEVICE L, V6, P184

[8]

MADDOX RL, 1985, IEEE T ELECTRON DEV, V32

[9] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

[10]

OSBURN CM, 1982, ELECTROCHEMICAL SOC, V822, P253

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