RF SPUTTERING OF GALLIUM-PHOSPHIDE THIN-FILMS

Gallium phosphide films were grown by r.f. sputtering on glass slides and on glass slides coated with thin gold films. The growth temperature ranged from the ambient to 540°C. With increasing growth temperature the film structure changed from amorphous to polycrystalline on the glass substrates and from amorphous to strong [100]-textured polycrystalline on the gold film substrates. The temperature of the amorphous-to-crystalline transition was slightly above 200°C for a deposition rate of 45 nm min-1. The electrical properties were strongly dependent on the growth temperature. The temperature dependences of both the resistivity and the relaxation time were fitted by the relation exp{(T0/T) 1 4} and a heterogeneous model is proposed. © 1979.