NANOSTRUCTURE FABRICATION BY SCANNING TUNNELING MICROSCOPE

被引：21

作者：

BABA, M

MATSUI, S

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 34, Miyukigaoka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 12期

关键词：

STM; SCANNING TUNNELING MICROSCOPE; DEPOSITION; ETCHING; NANOFABRICATION; STM-EBISED;

D O I：

10.1143/JJAP.29.2854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct writing deposition patterns of W metal and carbon, and etching patterns of Si are achieved by electron-beam-induced selective etching and deposition using a scanning tunneling microscope (STM-EBISED). These patterns have been obtained down to 50 nm in size with pulse modulating voltage. Furthermore, writing voltage dependencies of deposition and etching are discussed.

引用

页码：2854 / 2857

页数：4

共 4 条

[1] DIRECT WRITING OF 10-NM FEATURES WITH THE SCANNING TUNNELING MICROSCOPE
EHRICHS, EE
YOON, S
DELOZANNE, AL
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (23) : 2287 - 2289
[2] ETCHING OF SILICON (111) WITH THE SCANNING TUNNELING MICROSCOPE
EHRICHS, EE
DELOZANNE, AL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 571 - 573
[3] ELECTRON-BEAM INDUCED SELECTIVE ETCHING AND DEPOSITION TECHNOLOGY
MATSUI, S
ICHIHASHI, T
MITO, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05): : 1182 - 1190
[4] DIRECT DEPOSITION OF 10-NM METALLIC FEATURES WITH THE SCANNING TUNNELING MICROSCOPE
MCCORD, MA
KERN, DP
CHANG, THP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1877 - 1880

← 1 →