MODULATION SPECTROSCOPY OF SEMICONDUCTOR MICROSTRUCTURES

被引：43

作者：

POLLAK, FH ^{[1
]}

机构：

[1] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0749-6036(91)90338-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper reviews some recent interesting applications of modulation spectroscopy to study the electronic transitions in GaAs GaAlAs parabolic quantum wells, short-period, strained layer |frsol|GeSi/Si, GeSi Ge and GeSi Ge0.8Si0.2 superlattices and strained layer InGaAs GaAs single quantum wells. In addition, the discussion will include the use of SIN+ (SIP+) structures to evaluate surface electric fields and hence Fermi level pinning, investigation of epilayers/heterojunctions, studies of the two-dimensional electron gas in modulation-and δ-doped material, work on actual device structures such as HBTs and finally a new variation of the modulation method of differential reflectance. © 1991.

引用

页码：333 / 346

页数：14

共 74 条

[41] ELECTRONIC-STRUCTURE OF GE/SI MONOLAYER STRAINED-LAYER SUPERLATTICES [J].