MECHANISMS OF THE DEPOSITION OF HYDROGENATED CARBON-FILMS

被引：54

作者：

MOLLER, W ^{[1
]}

FUKAREK, W ^{[1
]}

LANGE, K ^{[1
]}

VONKEUDELL, A ^{[1
]}

JACOB, W ^{[1
]}

机构：

[1] MAX PLANCK INST PLASMA PHYS,D-85740 GARCHING,GERMANY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 4B期

关键词：

PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; DIAMOND-LIKE CARBON; PLASMA-SURFACE INTERACTION; THIN FILM GROWTH; DEPOSITION MECHANISMS; PLASMA MODELING; EFFECTIVE STICKING;

D O I：

10.1143/JJAP.34.2163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The paper reviews the elementary processes during the plasma-enhanced chemical vapour deposition of hydrogenated carbon films from methane, with special emphasis on the surface processes which determine the growth rate and film structure. Corresponding model calculations are critically discussed in comparison to experimental findings. Whereas a simplified plasma modeling can be performed with some reliability, only very limited information is available on the the surface physical and chemical mechanisms determining the growth rate as well as the stoichiometry and the structure of the deposited films. Proposed surface models involving widely different processes yield similar results and are thus indiscernible in comparison to results from deposition experiments. Nevertheless, reasonable fits to growth data can be obtained using a combined plasma-surface model. For the formation of film structure, recent ellipsometric data indicate that hydrogen chemistry might play a decisive role in addition to or rather than ion collisional effects.

引用

页码：2163 / 2171

页数：9

共 44 条

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