LASER ANNEALING OF BIPOLAR NPN TRANSISTORS

[1] BICKFORD CU, UNPUBLISHED

[2] GIBBONS JF, 1980, LASER ELECTRON BEAM, P593

[3] ELECTRICAL-PROPERTIES OF SI IMPLANTED WITH AS THROUGH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 262 - 268

[4] JOHNSON NM, 1980, LASER ELECTRON BEAM, P423

[5] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[6] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 532 - 534

[7] METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 114 - 116

[8] SANDOW PM, 1980, P ELECTROCHEM SOC, V80, P187

[1] BICKFORD CU, UNPUBLISHED

[2] GIBBONS JF, 1980, LASER ELECTRON BEAM, P593

[3] ELECTRICAL-PROPERTIES OF SI IMPLANTED WITH AS THROUGH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 262 - 268

[4] JOHNSON NM, 1980, LASER ELECTRON BEAM, P423

[5] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[6] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 532 - 534

[7] METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 114 - 116

[8] SANDOW PM, 1980, P ELECTROCHEM SOC, V80, P187