ELECTRICAL-PROPERTIES OF SI IMPLANTED WITH AS THROUGH SIO2-FILMS

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[2] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[3] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1689 - 1696

[4] EFFECTS OF THE RECOIL-IMPLANTED OXYGEN IN SI ON THE ELECTRICAL ACTIVATION OF ARSENIC AFTER THROUGH-OXIDE IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5251 - 5256

[5] CONCENTRATION PROFILES OF PHOSPHORUS, ARSENIC AND RECOILED OXYGEN-ATOMS IN SI BY ION-IMPLANTATION INTO SIO2-SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 647 - 656

[6] DEPTH DISTRIBUTION OF KNOCK-ON NITROGEN IN SI BY PHOSPHORUS IMPLANTATION THROUGH SI3N4 FILMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (08) : 505 - 508

[7] HIRAO T, 1978, INT C ION BEAM MODIF

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[9] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[10] RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 551 - 553

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 268 - 270

[2] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[3] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1689 - 1696

[4] EFFECTS OF THE RECOIL-IMPLANTED OXYGEN IN SI ON THE ELECTRICAL ACTIVATION OF ARSENIC AFTER THROUGH-OXIDE IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5251 - 5256

[5] CONCENTRATION PROFILES OF PHOSPHORUS, ARSENIC AND RECOILED OXYGEN-ATOMS IN SI BY ION-IMPLANTATION INTO SIO2-SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 647 - 656

[6] DEPTH DISTRIBUTION OF KNOCK-ON NITROGEN IN SI BY PHOSPHORUS IMPLANTATION THROUGH SI3N4 FILMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (08) : 505 - 508

[7] HIRAO T, 1978, INT C ION BEAM MODIF

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[9] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[10] RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 551 - 553