DIAMOND MESFET USING ULTRASHALLOW RTP BORON DOPING

被引：57

作者：

TSAI, W

DELFINO, M

HODUL, D

RIAZIAT, M

CHING, LY

REYNOLDS, G

COOPER, CB

机构：

[1] Varian Research Center, Palo Alto, CA

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 04期

关键词：

D O I：

10.1109/55.75749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A diamond p-type depletion-mode MESFET was fabricated using a novel doping technique to drive in and activate boron in type IIa diamond. An ultrashallow p-doped channel of less than 500 angstrom was created by this rapid-thermal-processing (RTP) solid-state diffusion using cubic boron nitride as the dopant source. The MESFET was observed to pinch off at high positive gate bias, and reverse-bias leakage was below 10(-12) A at +5 V.

引用

页码：157 / 159

页数：3

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