FURTHER EXAMINATION OF THE SI KLL AUGER LINE IN SILICON-NITRIDE THIN-FILMS

被引:136
作者
TAYLOR, JA
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D O I
10.1016/0378-5963(81)90068-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:168 / 184
页数:17
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  • [1] Carlson T. A., 1972, Journal of Electron Spectroscopy and Related Phenomena, V1, P161, DOI 10.1016/0368-2048(72)80029-X
  • [2] UTILITY OF BREMSSTRAHLUNG-INDUCED AUGER PEAKS
    CASTLE, JE
    WEST, RH
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 16 (03) : 195 - 197
  • [3] CASTLE JE, 1979, J ELECTRON SPECTROSC, V16, P97, DOI 10.1016/0368-2048(79)85008-2
  • [4] X-RAY PHOTOELECTRON-SPECTROSCOPY USING SI KALPHA RADIATION
    CASTLE, JE
    HAZELL, LB
    WHITEHEAD, RD
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 9 (03) : 247 - 250
  • [5] THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF THE ELECTRONIC-STRUCTURE OF OXYGEN ON SILICON
    CHEN, M
    BATRA, IP
    BRUNDLE, CR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1216 - 1220
  • [6] NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS
    DELORD, JF
    SCHROTT, AG
    FAIN, SC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 517 - 520
  • [7] DISTEFANO TH, 1971, PHYS REV LETT, V27, P107
  • [8] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON
    FLITSCH, R
    RAIDER, SI
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 305 - 308
  • [9] GEYULAI J, 1971, J APPL PHYS, V42, P451
  • [10] CHEMICAL EFFECTS IN AUGER-ELECTRON SPECTROSCOPY
    HAAS, TW
    GRANT, JT
    DOOLEY, GJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1853 - &