CONTROL OF SI SOLID-PHASE NUCLEATION BY SURFACE STEPS FOR HIGH-PERFORMANCE THIN-FILM TRANSISTORS

被引:7
作者
ASANO, T
MAKIHIRA, K
机构
[1] Center for Microelectronic Systems, Kyushu Institute of Technology, Iizuka, 820
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期
关键词
SI; SOLID PHASE CRYSTALLIZATION; NUCLEATION CONTROL; THIN-FILM TRANSISTOR;
D O I
10.1143/JJAP.32.482
中图分类号
O59 [应用物理学];
学科分类号
摘要
The solid phase nucleation process of amorphous Si(a-Si) deposited by vacuum evaporation on thermally grown SiO2 layers on Si substrates having steps has been investigated. Steps were formed by either isotropic wet chemical etching of the SiO2 layer or anisotropic wet chemical etching of Si(100) followed by thermal oxidation. It has been found that solid phase nucleation is enhanced at the steps and that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3 mum from the step edge has been observed. n-channel MOSFET's (metal-oxide-semiconductor field-effect-transistor's) which had steps at the source/drain edge were fabricated. They showed channel electron mobility of about 200 cm2/V.s, which is approximately one order higher than that obtained from MOSFET's fabricated in Si films formed by solid phase crystallization on flat SiO2/Si substrates.
引用
收藏
页码:482 / 485
页数:4
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