PREFERENTIAL NUCLEATION ALONG SIO2 STEPS IN AMORPHOUS SI

被引：29

作者：

MONIWA, M

MIYAO, M

TSUCHIYAMA, R

ISHIZAKA, A

ICHIKAWA, M

SUNAMI, H

TOKUYAMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.96286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：113 / 115

页数：3

共 15 条

[1] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[2]

Grove A. S., 1967, PHYS TECHNOL S, P29

[3] MICRO-PROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TECHNIQUE .1. DETERMINATION OF CRYSTALLOGRAPHIC ORIENTATIONS OF POLYCRYSTAL-SILICON SURFACES [J].

ICHIKAWA, M ;

HAYAKAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :145-153

[4] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J].

KUNII, Y ;

TABE, M ;

KAJIYAMA, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2847-2849

[5]

LAUDISE RA, 1970, GROWTH SINGLE CRYSTA, P118

[6] DAMAGE-DEPENDENT ELECTRICAL ACTIVATION OF ION-IMPLANTED SILICON .1. EXPERIMENTS ON PHOSPHORUS IMPLANTS [J].

MIYAO, M ;

YOSHIHIRO, N ;

TOKUYAMA, T ;

MITSUISHI, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :223-230

[7]

Miyao M., 1984, 16TH C SOL STAT DEV, P511

[8]

PAMPLIN BR, 1980, CRYST GROWTH, P4

[9]

Roth J. A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P169

[10]

SAITO T, 1984, 15TH P S ION IMPL SU, P9

← 1 2 →