ION-BEAM SPUTTERING APPARATUS WITH A SIMPLIFIED ACCELERATOR SYSTEM FOR DEPOSITION OF THIN-FILMS

被引：10

作者：

SUZUKI, T

YAMAZAKI, T

YOSHIOKA, H

TAKAHASHI, K

KAGEYAMA, T

机构：

[1] Tokyo Univ of Agriculture &, Technology, Tokyo, Jpn, Tokyo Univ of Agriculture & Technology, Tokyo, Jpn

来源：

关键词：

DEPOSITION RATE - ION BEAM SPUTTERING APPARATUS - SPUTTERING RATE - THIN FILMS - TIN OXIDE;

D O I：

10.1007/BF01756789

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：437 / 438

页数：2

共 7 条

[1] Harper J. M. E., 1978, THIN FILM PROCESSES, P175
[2] Kaufman H.R., 1974, ADV ELECT ELECT PHYS, V36, P265
[3] FOCUSED ION-BEAM DESIGNS FOR SPUTTER DEPOSITION
KAUFMAN, HR
HARPER, JME
CUOMO, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 899 - 905
[4] ION SOURCES FOR ION MACHINING APPLICATIONS
KAUFMAN, HR
READER, PD
ISAACSON, GC
[J]. AIAA JOURNAL, 1977, 15 (06) : 843 - 847
[5] DEPOSITION OF AMORPHOUS CO-TA AND CO-ZR THIN-FILMS BY MEANS OF DOUBLE ION-BEAM SPUTTERING
NAOE, M
TERADA, N
HOSHI, Y
YAMANAKA, S
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1984, 20 (05) : 1311 - 1313
[6] 30-CENTIMETER-DIAMETER ION MILLING SOURCE
ROBINSON, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 277 - 280
[7] WASSERBAUER JF, 1966, NASA TN D3628