CARRIER DECAY IN GAAS QUANTUM WELLS

被引：64

作者：

PICKIN, W

DAVID, JPR

机构：

[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 03期

关键词：

D O I：

10.1063/1.102805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier decays following pulsed excitation in GaAs-AlGaAs quantum wells have in the past been attributed to an excitonic recombination path. We show here that such an interpretation is inconsistent with the experimental evidence, and that the decays are controlled by recombination through electronic states at the GaAs-AlGaAs interfaces. We discuss the expected magnitude of the decay times and the influence of carrier trapping on the decay process.

引用

页码：268 / 270

页数：3

共 18 条

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