INTERFACE RECOMBINATION IN P-TYPE GAAS-(ALGA)AS QUANTUM WELL HETEROSTRUCTURES

被引：15

作者：

DUGGAN, G ^{[1
]}

RALPH, HI ^{[1
]}

ELLIOTT, RJ ^{[1
]}

机构：

[1] DEPT THEORET PHYS,OXFORD,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 56卷 / 01期

关键词：

D O I：

10.1016/0038-1098(85)90525-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

6

引用

收藏

页码：17 / 20

页数：4

相关论文

共 6 条

[1] PHOTOLUMINESCENCE DECAY TIMES IN (ALGA)AS GAAS MULTIPLE QUANTUM WELL HETEROSTRUCTURES
DAWSON, P
DUGGAN, G
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WOODBRIDGE, K
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (02) : 173 - 176
[2] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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WOODBRIDGE, K
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1227 - 1229
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[4] Many A., 1965, SEMICONDUCTOR SURFAC
[5] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6103 - 6108
[6] SERMAGE B, 1984, UNPUB 11TH INT S GAL