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DOUBLE-CRYSTAL X-RAY TOPOGRAPHIC DETERMINATION OF LOCAL STRAIN IN METAL-OXIDE-SEMICONDUCTOR DEVICE STRUCTURES
被引:13
作者
:
QADRI, SB
论文数:
0
引用数:
0
h-index:
0
QADRI, SB
MA, D
论文数:
0
引用数:
0
h-index:
0
MA, D
PECKERAR, M
论文数:
0
引用数:
0
h-index:
0
PECKERAR, M
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1987年
/ 51卷
/ 22期
关键词
:
D O I
:
10.1063/1.98483
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1827 / 1829
页数:3
相关论文
共 15 条
[1]
[Anonymous], 1984, ANN BOOK ASTM STANDA
[2]
BONSE V, 1982, DIRECT OBSERVATION I, P431
[3]
EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE
DORDA, G
论文数:
0
引用数:
0
h-index:
0
DORDA, G
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(09)
: 406
-
&
[4]
MECHANICAL-STRESS INFLUENCE ON EFFECTIVE MASSES IN SI INVERSION LAYERS
EISELE, I
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
EISELE, I
GESCH, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
GESCH, H
DORDA, G
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
DORDA, G
[J].
SURFACE SCIENCE,
1976,
58
(01)
: 169
-
177
[5]
INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE
FAIRFIELD, JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIELD, JM
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(11)
: 1229
-
+
[6]
X-RAY DIFFRACTION TOPOGRAPHY UTILIZING DOUBLE-CRYSTAL ARRANGEMENT OF (+, +) OR NON-PARALLEL (+, -) SETTING
KOHRA, K
论文数:
0
引用数:
0
h-index:
0
KOHRA, K
HASHIZUME, H
论文数:
0
引用数:
0
h-index:
0
HASHIZUME, H
YOSHIMURA, J
论文数:
0
引用数:
0
h-index:
0
YOSHIMURA, J
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1970,
9
(09)
: 1029
-
+
[7]
RESIDUAL STRAINS IN AMORPHOUS-SILICON FILMS MEASURED BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY
KUO, CL
论文数:
0
引用数:
0
h-index:
0
机构:
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
KUO, CL
VANIER, PE
论文数:
0
引用数:
0
h-index:
0
机构:
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
VANIER, PE
BILELLO, JC
论文数:
0
引用数:
0
h-index:
0
机构:
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
BILELLO, JC
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(02)
: 375
-
377
[8]
ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS
LAUX, SE
论文数:
0
引用数:
0
h-index:
0
LAUX, SE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(09)
: 1245
-
1251
[9]
Maissel L.I., 1970, HDB THIN FILM TECHNO
[10]
MEIERAN ES, 1970, SIEMENS REV, V37, P39
←
1
2
→
共 15 条
[1]
[Anonymous], 1984, ANN BOOK ASTM STANDA
[2]
BONSE V, 1982, DIRECT OBSERVATION I, P431
[3]
EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE
DORDA, G
论文数:
0
引用数:
0
h-index:
0
DORDA, G
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(09)
: 406
-
&
[4]
MECHANICAL-STRESS INFLUENCE ON EFFECTIVE MASSES IN SI INVERSION LAYERS
EISELE, I
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
EISELE, I
GESCH, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
GESCH, H
DORDA, G
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNCHEN,BUNDES REPUBLIK
DORDA, G
[J].
SURFACE SCIENCE,
1976,
58
(01)
: 169
-
177
[5]
INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE
FAIRFIELD, JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIELD, JM
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(11)
: 1229
-
+
[6]
X-RAY DIFFRACTION TOPOGRAPHY UTILIZING DOUBLE-CRYSTAL ARRANGEMENT OF (+, +) OR NON-PARALLEL (+, -) SETTING
KOHRA, K
论文数:
0
引用数:
0
h-index:
0
KOHRA, K
HASHIZUME, H
论文数:
0
引用数:
0
h-index:
0
HASHIZUME, H
YOSHIMURA, J
论文数:
0
引用数:
0
h-index:
0
YOSHIMURA, J
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1970,
9
(09)
: 1029
-
+
[7]
RESIDUAL STRAINS IN AMORPHOUS-SILICON FILMS MEASURED BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY
KUO, CL
论文数:
0
引用数:
0
h-index:
0
机构:
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
KUO, CL
VANIER, PE
论文数:
0
引用数:
0
h-index:
0
机构:
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
VANIER, PE
BILELLO, JC
论文数:
0
引用数:
0
h-index:
0
机构:
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973
BILELLO, JC
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(02)
: 375
-
377
[8]
ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS
LAUX, SE
论文数:
0
引用数:
0
h-index:
0
LAUX, SE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(09)
: 1245
-
1251
[9]
Maissel L.I., 1970, HDB THIN FILM TECHNO
[10]
MEIERAN ES, 1970, SIEMENS REV, V37, P39
←
1
2
→