RESIDUAL STRAINS IN AMORPHOUS-SILICON FILMS MEASURED BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY

被引：31

作者：

KUO, CL ^{[1
]}

VANIER, PE ^{[1
]}

BILELLO, JC ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.333083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：375 / 377

页数：3

共 13 条

[1] ASYMMETRIC CRYSTAL TOPOGRAPHIC CAMERA [J].

BOETTINGER, WJ ;

BURDETTE, HE ;

KURIYAMA, M ;

GREEN, RE .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1976, 47 (08) :906-911

[2] MEASUREMENT OF STRESSES IN THIN-FILMS ON SINGLE CRYSTALLINE SUBSTRATES [J].

BOHG, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (02) :445-450

[3] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

BRANTLEY, WA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535

[4] X-RAY MEASUREMENT OF ELASTIC STRAIN AND ANNEALING IN SEMICONDUCTORS [J].

COHEN, BG ;

FOCHT, MW .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :105-&

[5]

Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

[6] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J].

JACCODINE, RJ ;

SCHLEGEL, WA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2429-+

[7] MEASUREMENT OF FLEXURE IN SILICON WAFERS BY LANG X-RAY DIFFRACTION TECHNIQUE [J].

JULEFF, EM .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1965, 19 (02) :153-&

[8]

KUO CL, 1979, RES INORG MATER, V7, P94

[9]

KUO CL, 1981, WULI, V10, P152

[10] X-RAY DETERMINATION OF STRESSES IN THIN-FILMS AND SUBSTRATES BY AUTOMATIC BRAGG ANGLE CONTROL [J].

ROZGONYI, GA ;

CIESIELK.TJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (08) :1053-1057

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