HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDIES OF AL ADSORPTION ON SI(111)

被引:4
作者
GLANDER, GS
AKAVOOR, P
KESMODEL, LL
机构
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 11期
关键词
D O I
10.1103/PhysRevB.44.5893
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the high-resolution electron-energy-loss spectra at zero momentum transfer (q = 0) for the (square-root 3 X square-root 3)R 30-degrees, (square-root 7 X square-root 7)R 19.1-degrees, and 7 X 7 structures formed when Al is deposited on Si(111)-(7 X 7) and annealed. For the square-root 3 X square-root 3 structure, we found loss peaks at 32.3 and 69.2 meV that agree very well with calculated energies, as well as several other loss peaks of uncertain origin. We have tentatively identified phonon energies for the square-root 7 X square-root 7 structure, and demonstrated that for some sample preparations there may be a remnant of the (7 X 7)-Al structure present for surfaces showing the square-root 7 X square-root 7 and even the square-root 3 X square-root 3 reconstructions in low-energy electron diffraction.
引用
收藏
页码:5893 / 5896
页数:4
相关论文
共 7 条
[1]   EFFECTS OF COVERAGE ON THE GEOMETRY AND ELECTRONIC-STRUCTURE OF AL OVERLAYERS ON SI(111) [J].
HAMERS, RJ .
PHYSICAL REVIEW B, 1989, 40 (03) :1657-1671
[2]   ATOMIC-STRUCTURE OF SI(111)-(SQUARE-ROOT-3XSQUARE-ROOT-3)R30-DEGREES-AL STUDIED BY DYNAMIC LOW-ENERGY ELECTRON-DIFFRACTION [J].
HUANG, H ;
TONG, SY ;
YANG, WS ;
SHIH, HD ;
JONA, F .
PHYSICAL REVIEW B, 1990, 42 (12) :7483-7486
[3]   HIGH-RESOLUTION ELECTRON-ENERGY LOSS STUDIES OF AL AND GE CHEMISORPTION ON SILICON [J].
KELLY, MK ;
MARGARITONDO, G ;
ANDERSON, J ;
FRANKEL, DJ ;
LAPEYRE, GJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1481-1483
[4]   RECONSTRUCTION OF ALUMINUM AND INDIUM OVERLAYERS ON SI(111) - A SYSTEMATIC STUDY WITH HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION [J].
KELLY, MK ;
MARGARITONDO, G ;
ANDERSON, J ;
FRANKEL, DJ ;
LAPEYRE, GJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1396-1399
[5]   ANGLE-RESOLVED ULTRAVIOLET-PHOTOELECTRON-SPECTROSCOPY STUDY OF THE SI(111) SQUARE-ROOT-3 X SQUARE-ROOT-3-AL SURFACE [J].
SAGAWA, T ;
KINOSHITA, T ;
KONO, S .
PHYSICAL REVIEW B, 1985, 32 (04) :2714-2716
[6]   UNOCCUPIED SURFACE-STATES REVEALING THE SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-AL, SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-GA, AND SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-IN ADATOM GEOMETRIES [J].
NICHOLLS, JM ;
REIHL, B ;
NORTHRUP, JE .
PHYSICAL REVIEW B, 1987, 35 (08) :4137-4140
[7]   SURFACE PHONON FREQUENCIES AND EIGENVECTORS ON SI(111)-SQUARE-ROOT-3XSQUARE-ROOT-3-AL [J].
NORTHRUP, JE .
PHYSICAL REVIEW B, 1989, 39 (02) :1434-1437