LASER-ASSISTED ATOMIC LAYER EPITAXY

被引：13

作者：

AOYAGI, Y

MEGURO, T

IWAI, S

DOI, A

机构：

[1] RIKEN (The Institute of Physical and Chemical Research), Wako-shi, Saitama

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 10卷 / 02期

关键词：

D O I：

10.1016/0921-5107(91)90118-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Laser-assisted atomic layer epitaxy (laser ALE) is reviewed. The characteristics and the mechanism of laser ALE are discussed, with a brief description of possible applications. The mechanism of laser ALE seems to be atom-selective decomposition of trimethylgallium and triethylgallium at the surface of GaAs. This atom-selective decomposition is not a thermal effect but a photochemical effect on the GaAs surface.

引用

页码：121 / 132

页数：12

共 26 条

[1]

Aoyagi Y., 1989, Chemtronics, V4, P117

[2] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J].