NONRADIATIVE RECOMBINATION AT DISLOCATIONS IN III-V COMPOUND SEMICONDUCTORS

[1] LIKE-SIGN ASYMMETRIC DISLOCATIONS IN ZINC-BLENDE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1972, 21 (05) : 185 - &

[2] [Anonymous], 1968, THEORY DISLOCATION

[3] ELECTRICAL RECOMBINATION BEHAVIOR AT DISLOCATIONS IN GALLIUM-PHOSPHIDE AND SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 19 - 21

[4] LOW-ANGLE [011] TILT BOUNDARY IN GERMANIUM .1. HIGH-RESOLUTION STRUCTURE DETERMINATION [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1979, 39 (04): : 405 - 418

[5] BOURRET A, 1978, 9TH INT C EL MICR TO, V1, P294

[6] GOTTSCHALK M, 1978, PHYS STATUS SOLIDI A, V45, P207

[7] RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 27 - 32

[8] DISLOCATIONS IN THE DIAMOND LATTICE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 129 - 141

[9] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 73 - 75

[10] LABUSCH R, 1974, LATTICE DEFECTS SEMI, P56

[1] LIKE-SIGN ASYMMETRIC DISLOCATIONS IN ZINC-BLENDE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1972, 21 (05) : 185 - &

[2] [Anonymous], 1968, THEORY DISLOCATION

[3] ELECTRICAL RECOMBINATION BEHAVIOR AT DISLOCATIONS IN GALLIUM-PHOSPHIDE AND SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 19 - 21

[4] LOW-ANGLE [011] TILT BOUNDARY IN GERMANIUM .1. HIGH-RESOLUTION STRUCTURE DETERMINATION [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1979, 39 (04): : 405 - 418

[5] BOURRET A, 1978, 9TH INT C EL MICR TO, V1, P294

[6] GOTTSCHALK M, 1978, PHYS STATUS SOLIDI A, V45, P207

[7] RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 27 - 32

[8] DISLOCATIONS IN THE DIAMOND LATTICE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 129 - 141

[9] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 73 - 75

[10] LABUSCH R, 1974, LATTICE DEFECTS SEMI, P56