NONRADIATIVE RECOMBINATION AT DISLOCATIONS IN III-V COMPOUND SEMICONDUCTORS

[11] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176

[12] MADER S, 1974, APPL PHYS LETT, V24, P365

[13] ELECTRON-STATES ASSOCIATED WITH CORE REGION OF 60-DEGREES-DISLOCATION IN SILICON AND GERMANIUM [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 85 (02): : 673 - 681

[14] OURMAZD A, 1977, DEV ELECTRON MICROSC, V7, P251

[15] DISLOCATION DEFECT STATES IN SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 67 - 70

[16] Petroff P M, 1978, SCANNING ELECTRON MI, V1, P325

[17] RAY ILF, 1971, P ROY SOC LONDON A, V325, P532

[18] READ WT, 1954, PHILOS MAG, V45, P775

[19] READ WT, 1955, PHILOS MAG, V46, P111

[20] EPR OF DISLOCATIONS IN SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 101 - 106

[11] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176

[12] MADER S, 1974, APPL PHYS LETT, V24, P365

[13] ELECTRON-STATES ASSOCIATED WITH CORE REGION OF 60-DEGREES-DISLOCATION IN SILICON AND GERMANIUM [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 85 (02): : 673 - 681

[14] OURMAZD A, 1977, DEV ELECTRON MICROSC, V7, P251

[15] DISLOCATION DEFECT STATES IN SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 67 - 70

[16] Petroff P M, 1978, SCANNING ELECTRON MI, V1, P325

[17] RAY ILF, 1971, P ROY SOC LONDON A, V325, P532

[18] READ WT, 1954, PHILOS MAG, V45, P775

[19] READ WT, 1955, PHILOS MAG, V46, P111

[20] EPR OF DISLOCATIONS IN SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 101 - 106