SURFACE SPECTROSCOPY FROM ULTRATHIN ALPHA-SN FILMS ON CDTE(110)

被引：14

作者：

DITTMARWITUSKI, A ^{[1
]}

MOLLER, PJ ^{[1
]}

机构：

[1] ACAD TECHNOL & AGR BYDGOSZCZ,INST MATH & PHYS,BYDGOSZCZ,POLAND

来源：

SURFACE SCIENCE | 1993年 / 287卷

关键词：

D O I：

10.1016/0039-6028(93)91031-J

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

On the basis of electron-spectroscopy results it has been deduced that alpha-Sn grows on CdTe(110) surfaces at coverages lower than 3 monolayers in layer-by-layer mode, followed by growth of (110)-oriented islands (Stranski-Krastanov mode). During the epitaxial growth an empty interface state due to Sn atoms appeared at 2.3 eV above the Fermi level. Band gaps in the conduction alpha-Sn band were found at 7.4 and 17.6 eV above the vacuum level.

引用

页码：577 / 583

页数：7

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