共 35 条
- [1] GE-GAAS(110) INTERFACE FORMATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
- [2] BAUER RS, COMMUNICATION
- [3] CARDONA M, 1970, 10TH P C PHYS SEM CA
- [4] CERRINA F, 1981, 41ST ANN C PHYS EL B
- [5] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01): : 405 - 419
- [6] (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1244 - 1248
- [7] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
- [8] LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF THE SURFACE-DEFECT STRUCTURE OF GE GROWN EPITAXIALLY ON GAAS(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 802 - 803
- [10] ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1501 - 1503