LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF THE SURFACE-DEFECT STRUCTURE OF GE GROWN EPITAXIALLY ON GAAS(110)

被引：4

作者：

CLEARFIELD, HM ^{[1
]}

WELKIE, DG ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR MAT SCI,MADISON,WI 53706

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：802 / 803

页数：2

共 11 条

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[6] MONCH W, 1980, J VAC SCI TECHNOL, V17, P1094, DOI 10.1116/1.570597
[7] ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS OF BAND DISCONTINUITIES IN GAAS-GE HETEROJUNCTION
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[8] VENABLES JA, 1975, EPITAXIAL GROWTH B, P381
[9] CORRELATION OF SHORT-RANGE ORDER AND SPUTTER DOSE IN GAAS(110) USING A VIDICON-BASED LEED SYSTEM
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 784 - 788
[10] INVESTIGATION OF THE INSTRUMENT RESPONSE OF A VIDICON-BASED LOW-ENERGY ELECTRON-DIFFRACTION SYSTEM
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[J]. APPLIED SURFACE SCIENCE, 1979, 3 (02) : 272 - 292