TRANSPORT-PROPERTIES OF EVAPORATED VERSUS SPUTTERED AMORPHOUS-GERMANIUM FILMS

被引:15
作者
THEYE, ML [1 ]
GHEORGHIU, A [1 ]
RAPPENEAU, T [1 ]
LEWIS, A [1 ]
机构
[1] HARVARD UNIV, DIV APPL SCI, CAMBRIDGE, MA 02138 USA
来源
JOURNAL DE PHYSIQUE | 1980年 / 41卷 / 10期
关键词
D O I
10.1051/jphys:0198000410100117300
中图分类号
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号
0805 ; 080502 ; 080801 ; 0809 ;
摘要
The electrical d. c. conductivity and the thermoelectric power of evaporated amorphous Ge films prepared under various conditions were thoroughly measured over a wide temperature range (50-600 K). The results are compared in detail to those of similar measurements on sputtered amorphous Ge films. The similarities between the transport properties of the two types of samples are emphasized and discussed. The discrepancies are tentatively attributed to the nonhomogeneity of the different amorphous films.
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页码:1173 / 1181
页数:9
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