THEORY OF AUGER NEUTRALIZATION OF IONS AT SURFACE OF A DIAMOND-TYPE SEMICONDUCTOR

被引：283

作者：

HAGSTRUM, HD

机构：

来源：

PHYSICAL REVIEW | 1961年 / 122卷 / 01期

关键词：

D O I：

10.1103/PhysRev.122.83

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：83 / +

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[11] ENERGY LEVEL DIAGRAMS FOR GERMANIUM AND SILICON SURFACES
HANDLER, P
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 1 - 8
[12] ELECTRONIC SURFACE STATES AND THE CLEANED GERMANIUM SURFACE
HANDLER, P
PORTNOY, WM
[J]. PHYSICAL REVIEW, 1959, 116 (03): : 516 - 526
[13] Self-consistent field calculations for Ge++ and Ge
Hartree, W
Hartree, DR
Manning, MF
[J]. PHYSICAL REVIEW, 1941, 59 (03): : 306 - 307
[14] THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM
HERMAN, F
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12): : 1703 - 1732
[15] THEORETICAL INVESTIGATION OF THE ELECTRONIC ENERGY BAND STRUCTURE OF SOLIDS
HERMAN, F
[J]. REVIEWS OF MODERN PHYSICS, 1958, 30 (01) : 102 - 121
[16] CALCULATION OF THE ENERGY BAND STRUCTURES OF THE DIAMOND AND GERMANIUM CRYSTALS BY THE METHOD OF ORTHOGONALIZED PLANE WAVES
HERMAN, F
[J]. PHYSICAL REVIEW, 1954, 93 (06): : 1214 - 1225
[17] SOME RECENT DEVELOPMENTS IN THE CALCULATION OF CRYSTAL ENERGY BANDS - NEW RESULTS FOR THE GERMANIUM CRYSTAL
HERMAN, F
[J]. PHYSICA, 1954, 20 (10): : 801 - 812
[18] DIE SI KBETA-BANDEN DER RONTGENEMISSIONSSPEKTREN VON ELEMENTAREM SILICIUM, SILICIUMCARBID UND SILICIUMDIOXYD
KERN, B
[J]. ZEITSCHRIFT FUR PHYSIK, 1960, 159 (02): : 178 - 193
[19] CRYSTAL POTENTIAL AND ENERGY BANDS OF SEMICONDUCTORS .3. SELF-CONSISTENT CALCULATIONS FOR SILICON
KLEINMAN, L
PHILLIPS, JC
[J]. PHYSICAL REVIEW, 1960, 118 (05): : 1153 - 1167
[20] CONTRIBUTION TO THE THEORY OF THE SHOCKLEY SURFACE STATES .1. GENERAL FORMULATION AND THE CASE OF ZERO DEFORMATION OF THE POTENTIAL ON THE GOODWIN-ARTMANN MODEL
KOUTECKY, J
TOMASEK, M
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 241 - 247

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