EPITAXIAL-GROWTH AND DOPING OF AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS

[1] BERGEMEISTER EA, 1979, J APPL PHYS, V50, P5790

[2] Carter C. H. Jr., 1986, Journal of Materials Research, V1, P811, DOI 10.1557/JMR.1986.0811

[3] CARTER CH, 1985, MATER RES SOC S P, V46, P593

[4] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (10) : 851 - 855

[5] JEPPS NW, 1984, J CRYST GROWTH CHARA, V7, P259

[6] JOHNSON EO, 1965, RCA REV, V26, P163

[7] FIGURE OF MERIT FOR SEMICONDUCTORS FOR HIGH-SPEED SWITCHES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 225 - &

[8] THEORETICAL AND EMPIRICAL-STUDIES OF IMPURITY INCORPORATION INTO BETA-SIC THIN-FILMS DURING EPITAXIAL-GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) : 2350 - 2357

[9] PHYSICAL AND CHEMICAL NATURE OF FILMS FORMED ON SI(100) SURFACES SUBJECTED TO C2H4 AT ELEVATED-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2269 - 2275

[10] EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1074 - 1076

[1] BERGEMEISTER EA, 1979, J APPL PHYS, V50, P5790

[2] Carter C. H. Jr., 1986, Journal of Materials Research, V1, P811, DOI 10.1557/JMR.1986.0811

[3] CARTER CH, 1985, MATER RES SOC S P, V46, P593

[4] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (10) : 851 - 855

[5] JEPPS NW, 1984, J CRYST GROWTH CHARA, V7, P259

[6] JOHNSON EO, 1965, RCA REV, V26, P163

[7] FIGURE OF MERIT FOR SEMICONDUCTORS FOR HIGH-SPEED SWITCHES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 225 - &

[8] THEORETICAL AND EMPIRICAL-STUDIES OF IMPURITY INCORPORATION INTO BETA-SIC THIN-FILMS DURING EPITAXIAL-GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) : 2350 - 2357

[9] PHYSICAL AND CHEMICAL NATURE OF FILMS FORMED ON SI(100) SURFACES SUBJECTED TO C2H4 AT ELEVATED-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2269 - 2275

[10] EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1074 - 1076