DEPENDENCE OF BARRIER HEIGHT ON INSULATOR THICKNESS IN A1-(A1-OXIDE)-A1 SANDWICHES

被引:22
作者
KADLEC, J [1 ]
GUNDLACH, KH [1 ]
机构
[1] MAX PLANCK INST PHYS & ASTROPHYS,ABT NUMER RECHENMASCHINEN,FOHRINGER RING 6,8 MUNICH 40,FED REP GER
关键词
D O I
10.1016/0038-1098(75)90438-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 [凝聚态物理];
摘要
引用
收藏
页码:621 / 623
页数:3
相关论文
共 8 条
[1]
ONE-DIMENSIONAL ONSAGER THEORY FOR CARRIER INJECTION IN METAL-INSULATOR SYSTEMS [J].
BLOSSEY, DF .
PHYSICAL REVIEW B, 1974, 9 (12) :5183-5187
[2]
The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].
Fowler, RH .
PHYSICAL REVIEW, 1931, 38 (01) :45-56
[3]
LOGARITHMIC CONDUCTIVITY OF AL-AL2O3-AL TUNNELING JUNCTIONS PRODUCED BY PLASMA-OXIDATION AND BY THERMAL OXIDATION [J].
GUNDLACH, KH ;
HOLZL, J .
SURFACE SCIENCE, 1971, 27 (01) :125-&
[4]
SPACE-CHARGE DEPENDENCE OF BARRIER HEIGHT ON INSULATOR THICKNESS IN AL-(AL-OXIDE)-AL SANDWICHES [J].
GUNDLACH, KH ;
KADLEC, J .
APPLIED PHYSICS LETTERS, 1972, 20 (11) :445-&
[5]
BARRIER ENERGIES IN MIM STRUCTURES FROM PHOTORESPONSE - EFFECT OF SCATTERING IN INSULATING FILM [J].
LEWICKI, G ;
MEAD, CA ;
MASERJIA.J .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1764-&
[6]
VOLTAGE DEPENDENCE OF BARRIER HEIGHT IN AIN TUNNEL JUNCTIONS - (PHOTOEMISSION - ROOM TEMPERATURE - E) [J].
LEWICKI, GW ;
MEAD, CA .
APPLIED PHYSICS LETTERS, 1966, 8 (04) :98-&
[7]
DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER [J].
PRUNIAUX, BR ;
ADAMS, AC .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1980-&
[8]
SCHUERMEYER FL, 1968, J APPL PHYS, V39, P1971