FAR INFRARED AND SUBMILLIMETER IMPACT IONIZATION MODULATOR

被引：12

作者：

MELNGAILIS, I

TANNENWALD, PE

机构：

[1] M.I.T. Lincoln Lab., Lexington

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 05期

关键词：

D O I：

10.1109/PROC.1969.7084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Free carriers in germanium produced by impact ionization at 4.2°K have been used to modulate 200-p-to 2-mm-wavelength radiation. Modulation depths up to 100 percent and bandwidths of 100 MHz have been obtained. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

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页码：806 / +

页数：1

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