TRANSIENT PHOTOCAPACITANCE AND PHOTOCURRENT STUDIES OF UNDOPED HYDROGENATED AMORPHOUS-SILICON

被引：51

作者：

GELATOS, AV ^{[1
]}

MAHAVADI, KK ^{[1
]}

COHEN, JD ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.99892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：403 / 406

页数：4

相关论文

共 9 条

[1] AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83
[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY
COHEN, JD
HARBISON, JP
WECHT, KW
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112
[3] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES
COHEN, JD
LANG, DV
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350
[4] GELATOS AV, 1986, APPL PHYS LETT, V49, P772
[5] THE DENSITY OF STATES IN UNDOPED AND DOPED AMORPHOUS HYDROGENATED SILICON
KOCKA, J
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) : 91 - 98
[6] Lang D.V., 1979, TOP APPL PHYS, P93, DOI 10.1007/3540095950_9
[7] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
LANG, DV
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320
[8] LIGHT-INDUCED DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON - A DETAILED EXAMINATION USING JUNCTION-CAPACITANCE METHODS
MAHAVADI, KK
ZELLAMA, K
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7776 - 7779
[9] DISORDER EFFECTS ON DEEP TRAPPING IN AMORPHOUS-SEMICONDUCTORS
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (01): : L15 - L20