LIGHT-INDUCED DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON - A DETAILED EXAMINATION USING JUNCTION-CAPACITANCE METHODS

被引：17

作者：

MAHAVADI, KK ^{[1
]}

ZELLAMA, K ^{[1
]}

COHEN, JD ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.35.7776

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7776 / 7779

页数：4

共 13 条

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[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY
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HARBISON, JP
WECHT, KW
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[3] PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECT
COHEN, JD
LANG, DV
HARBISON, JP
SERGENT, AM
[J]. SOLAR CELLS, 1983, 9 (1-2): : 119 - 131
[4] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458
[5] TEMPERATURE-DEPENDENT CREATION OF LIGHT-INDUCED DEFECTS IN A-SI-H SCHOTTKY-BARRIER DIODES
GLADE, A
BEICHLER, J
MELL, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 397 - 400
[6] GLADE A, 1985, J NONCRYST SOLIDS, V78
[7] STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY
HAN, D
FRITZSCHE, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 397 - 400
[8] KINETICS OF THE METASTABLE OPTICALLY INDUCED ELECTRON-SPIN-RESONANCE IN A-SI-H
LEE, C
OHLSEN, WD
TAYLOR, PC
ULLAL, HS
CEASAR, GP
[J]. PHYSICAL REVIEW B, 1985, 31 (01): : 100 - 105
[9] DRIVE-LEVEL CAPACITANCE PROFILING - ITS APPLICATION TO DETERMINING GAP STATE DENSITIES IN HYDROGENATED AMORPHOUS-SILICON FILMS
MICHELSON, CE
GELATOS, AV
COHEN, JD
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 412 - 414
[10] DOPING MECHANISM IN ALPHA-SI-H
ROBERTSON, J
[J]. PHYSICAL REVIEW B, 1985, 31 (06): : 3817 - 3821

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