DRIVE-LEVEL CAPACITANCE PROFILING - ITS APPLICATION TO DETERMINING GAP STATE DENSITIES IN HYDROGENATED AMORPHOUS-SILICON FILMS

被引：127

作者：

MICHELSON, CE

GELATOS, AV

COHEN, JD

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.96129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：412 / 414

页数：3

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共 9 条

[1] A THEORY OF THE ADMITTANCE OF AN AMORPHOUS-SILICON SCHOTTKY-BARRIER
ARCHIBALD, IW
ABRAM, RA
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (02): : 111 - 125
[2] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES
COHEN, JD
LANG, DV
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350
[3] DIODE EDGE EFFECT ON DOPING-PROFILE MEASUREMENTS
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) : 404 - &
[4] ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON
HIROSE, M
SUZUKI, T
DOHLER, GH
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 234 - 236
[5] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
LANG, DV
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320
[6] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
LANG, DV
COHEN, JD
HARBISON, JP
SERGENT, AM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 474 - 476
[7] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257
[8] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS
MILLER, GL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &
[9] ZELLAMA K, UNPUB