THE OPTICAL (FREE-CARRIER) ABSORPTION OF A HOLE-ELECTRON PLASMA IN SILICON

被引:26
作者
HORWITZ, CM
SWANSON, RM
机构
关键词
D O I
10.1016/0038-1101(80)90111-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1191 / 1194
页数:4
相关论文
共 14 条
[1]   RECOMBINATION IN THE END REGIONS OF PIN DIODES [J].
BERZ, F ;
COOPER, RW ;
FAGG, S .
SOLID-STATE ELECTRONICS, 1979, 22 (03) :293-301
[2]   INFRA-RED ABSORPTION IN SILICON [J].
BRIGGS, HB .
PHYSICAL REVIEW, 1950, 77 (05) :727-728
[3]   MEASUREMENT OF CHARGE-CARRIER BEHAVIOR IN PIN DIODES USING A LASER TECHNIQUE [J].
COOPER, RW ;
PAXMAN, DH .
SOLID-STATE ELECTRONICS, 1978, 21 (06) :865-869
[4]   DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J].
DANNHAUSER, F .
SOLID-STATE ELECTRONICS, 1972, 15 (12) :1371-+
[5]  
GHANDHI SK, 1968, THEORY PRACTICE MICR, P235
[7]   BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J].
LANYON, HPD ;
TUFT, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1014-1018
[8]   FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].
MACFARLANE, GG ;
MCLEAN, TP ;
QUARRINGTON, JE ;
ROBERTS, V .
PHYSICAL REVIEW, 1958, 111 (05) :1245-1254
[9]   SILICON OPTICAL CONSTANTS IN INFRARED [J].
SCHUMANN, PA ;
KEENAN, WA ;
TONG, AH ;
GEGENWARTH, HH ;
SCHNEIDER, CP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :145-+
[10]   COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS [J].
SCHUMANN, PA ;
PHILLIPS, RP .
SOLID-STATE ELECTRONICS, 1967, 10 (09) :943-&