ELECTRIC FIELDS IN THIN-FILM DIELECTRICS ON METAL SURFACES

被引:9
作者
FROMHOLD, AT
机构
[1] Department of Physics, Auburn University, Auburn
关键词
D O I
10.1063/1.1672114
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electrostatic fields in oxides and similar compounds formed on metals by thermal reaction with ambient gases are deduced for the case in which rate is determined by charged-particle diffusion through the compound. Specifically, the limiting case where the macroscopic electrostatic potential leads to a condition approximating local charge neutrality is examined. The position-dependent electric field in the compound leads to an electrostatic potential across the layer which is independent of thickness.
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页码:1143 / &
相关论文
共 18 条
[11]   PARABOLIC OXIDATION OF METALS [J].
FROMHOLD, AT .
PHYSICS LETTERS A, 1969, A 29 (03) :157-&
[12]   ELECTRON TUNNELING THROUGH THIN ALUMINUM OXIDE FILMS [J].
HARTMAN, TE ;
CHIVIAN, JS .
PHYSICAL REVIEW, 1964, 134 (4A) :1094-+
[13]   RECTIFYING ACTION AND ELECTROMOTIVE FORCES OF FILMS OF TA205 AND SI02 AT HIGH TEMPERATURES [J].
ISHIKAWA, Y ;
SASAKI, Y ;
SEKI, Y ;
INOWAKI, S .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) :867-&
[14]  
KROGER FA, 1964, CHEM IMPERFECT CRYST, P796
[15]  
KROGER FA, 1964, CHEMISTRY IMPERFECT, P320
[16]   VOLUME-CONTROLLED CURRENT INJECTION IN INSULATORS [J].
LAMPERT, MA .
REPORTS ON PROGRESS IN PHYSICS, 1964, 27 :329-367
[17]   ON MOTT THEORY OF FORMATION OF PROTECTIVE OXIDE FILMS [J].
POLLACK, SR ;
MORRIS, CE .
SOLID STATE COMMUNICATIONS, 1964, 2 (01) :21-22
[18]  
Wagner C, 1933, Z PHYS CHEM B-CHEM E, V21, P25