LOW-TEMPERATURE PHOTOMAGNETOELECTRIC AND PHOTOCONDUCTIVE EFFECTS IN N-TYPE INAS

被引：6

作者：

LI, SS

HUANG, CI

机构：

来源：

PHYSICAL REVIEW B | 1971年 / 4卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.4.4633

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4633 / &

共 7 条

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LI, SS
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[2] PHOTOELECTROMAGNETIC EFFECT IN INDIUM ARSENIDE
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[3] PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS IN INSB
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ZITTER, RN
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 278 - 285
[4] LI SK, TO BE PUBLISHED
[5] EFFECTS OF TEMPERATURE, PHOTOINJECTION, AND MAGNETIC FIELD ON PHOTOMAGNETOELECTRIC RESPONSE IN AS-DOPED SI
LI, SS
[J]. PHYSICAL REVIEW, 1969, 188 (03): : 1246 - &
[6] THEORY OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS
VANROOSBROECK, W
[J]. PHYSICAL REVIEW, 1956, 101 (06): : 1713 - 1725
[7] RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE
ZITTER, RN
STRAUSS, AJ
ATTARD, AE
[J]. PHYSICAL REVIEW, 1959, 115 (02): : 266 - 273