SILICON ON INSULATOR MATERIAL FORMED BY OXYGEN IMPLANTATION AND HIGH-TEMPERATURE ANNEALING - CARRIER TRANSPORT, OXYGEN ACTIVITY, AND INTERFACE PROPERTIES

被引:30
作者
CRISTOLOVEANU, S [1 ]
GARDNER, S [1 ]
JAUSSAUD, C [1 ]
MARGAIL, J [1 ]
AUBERTONHERVE, AJ [1 ]
BRUEL, M [1 ]
机构
[1] CEA,CEN GRENOBLE,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE
关键词
D O I
10.1063/1.339409
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2793 / 2798
页数:6
相关论文
共 22 条
[21]  
VASUDEV PK, 1986, UNPUB 1986 IEEE SOS
[22]   TEMPERATURE-DEPENDENCE OF HALL-MOBILITY AND ELECTRICAL-CONDUCTIVITY IN SIMOX FILMS [J].
WYNCOLL, J ;
KANG, KN ;
CRISTOLOVEANU, S ;
HEMMENT, PLF ;
ARROWSMITH, RP .
ELECTRONICS LETTERS, 1984, 20 (12) :485-486