THEORY OF ANOMALOUS DIFFUSION IN SOLIDS NEAR DIFFUSANT SATURATION CONCENTRATIONS - EXAMPLE - PHOSPHORUS IN SILICON

被引：3

作者：

SHAW, D

机构：

来源：

关键词：

D O I：

10.1149/1.2407397

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1587 / &

共 8 条

[1]

BRAKEMAN PE, 1970, J ELECTROCHEM SOC, V117, P688

[2]

KOIFMAN AI, 1970, SOV PHYS SEMICOND, V3, P1173

[3] DIFFUSION OF PHOSPHORUS INTO SILICON [J].

MAEKAWA, S .

[4] ARSENIC ISOCONCENTRATION DIFFUSION STUDIES IN SILICON [J].

MASTERS, BJ ;

FAIRFIEL.JM .

[5] BORON DIFFUSION INTO SILICON USING ELEMENTAL BORON [J].

OKAMURA, M .

[6]

SHEWMON PG, 1963, DIFFUSION SOLIDS, P29

TANNENBAUM, E .

[8] SOLID SOLUBILITY AND DIFFUSION COEFFICIENTS OF BORON IN SILICON [J].

VICK, GL ;

WHITTLE, KM .