GENERATION AND FOCUSING OF INTENSE ION-BEAMS WITH AN INVERSE PINCH ION DIODE

被引：13

作者：

HASHIMOTO, Y

SATO, M

YATSUZUKA, M

NOBUHARA, S

机构：

[1] Department of Electrical Engineering, Himeji Institute of Technology, Hyogo, Himeji

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 6A期

关键词：

INTENSE ION BEAM; INVERSE PINCH ION DIODE; ION BEAM FOCUSING;

D O I：

10.1143/JJAP.31.1922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Generation and focusing of ion beams using an inverse pinch ion diode with a flat anode has been studied. The ion beams generated with the inverse pinch ion diode were found to be focused at 120 mm from the anode by the electrostatic field in the diode. The energy and maximum current density of the ion beams were 180 keV and 420 A/cm2, respectively. The focusing angle of the ion beams was 4.3-degrees. The beam brightness was estimated to be 1.3 GW/cm2 . rad2. The focusing distance of the ion beams was found to be controllable by changing the diameters of the anode and cathode.

引用

页码：1922 / 1927

页数：6

共 16 条

[1] INTENSE PULSED ION-BEAMS FOR FUSION APPLICATIONS [J].