TEMPERATURE-DEPENDENT PHOTOLUMINESCENT PROPERTIES OF INASXP1-X/INP STRAINED-LAYER QUANTUM-WELLS

被引：18

作者：

STORCH, DR ^{[1
]}

SCHNEIDER, RP ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.351514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal quenching of photoluminescence from InAsxP1-x/InP strained-layer quantum wells has been investigated over the temperature range of 20-295 K. Structures with compositions of x = 0. 67 and x = 1.0 and quantum well thicknesses of 1-17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.

引用

页码：3041 / 3045

页数：5

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