CHARACTERIZATION OF MN-DOPED INASXP1-X GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：18

作者：

HUANG, K ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 14期

关键词：

D O I：

10.1063/1.99190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1155 / 1157

页数：3

共 13 条

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[3] AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1595 - 1598
[5] GOBELI GW, 1965, PHYS REV A, V137, P246
[6] EPITAXIAL-GROWTH OF MANGANESE-DOPED INDIUM-PHOSPHIDE
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[7] ELECTRONIC AND OPTICAL-PROPERTIES OF FE-DOPED INP PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4342 - 4344
[8] BARRIER CONTROL AND MEASUREMENTS - ABRUPT SEMICONDUCTOR HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 433 - 439
[9] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS
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[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (13) : 1414 - 1417
[10] ON THE POSITION OF ENERGY-LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : L961 - L964

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