EPITAXIAL-GROWTH OF MANGANESE-DOPED INDIUM-PHOSPHIDE

被引：3

作者：

HUANG, K ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1987年 / 6卷 / 11期

关键词：

D O I：

10.1007/BF01794600

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1310 / 1312

页数：3

共 11 条

[1] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J].

CLERJAUD, B .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19) :3615-3661

[2] ODMR AND ELECTRON-PARAMAGNETIC-RES IN INP,MN [J].

DAWEI, Y ;

CAVENETT, BC ;

SKOLNICK, MS .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (18) :L647-L653

[3] AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP [J].

EAVES, L ;

SMITH, AW ;

SKOLNICK, MS ;

COCKAYNE, B .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4955-4963

[4] PROPERTIES OF MN-DOPED P-TYPE INXGA1-XASYP1-Y GROWN BY LIQUID-PHASE EPITAXY [J].

FUJITA, S ;

KUZUHARA, M ;

YAGYU, M ;

SASAKI, A .

SOLID-STATE ELECTRONICS, 1982, 25 (05) :359-&

[5] ELECTRONIC AND OPTICAL-PROPERTIES OF FE-DOPED INP PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

HUANG, K ;

WESSELS, BW .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4342-4344

[6] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :10-14

[7] ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MACRANDER, AT ;

LONG, JA ;

RIGGS, VG ;

BLOEMEKE, AF ;

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1297-1298

[8]

NAHORY RE, 1983, I PHYS C SER, V65, P7

[9] ELECTRICAL-PROPERTIES OF MANGANESE DOPED GA1-XINXAS GROWN BY LIQUID-PHASE EPITAXY [J].

PHATAK, SB ;

BEDAIR, SM ;

FUJITA, S .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :839-&

[10] TRANSITION-METAL DIFFUSION IN INP - PHOTOLUMINESCENCE INVESTIGATION [J].

SKOLNICK, MS ;

FOULKES, EJ ;

TUCK, B .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2951-2961

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